TeraSpike Microprobe, THz near-field sensor (TD-800-X-HRS)
- Smallest active THz probe-tip on the market.
- Patented design.
- Spatial resolution up to 3 um.
- Frequency range 0-4 THz.
- Adaptable to all laser-based THz-Systems with λ < 860 nm.
- Mounting compatible with standard opto-mechanical components.
- Typical optical excitation power 1-5 mW (1-5 uJ/cm2).
- No bias voltage required during measurement.
- Integrated overvoltage protection circuit.
Highest THz near-field sensitivity and a convincing resolution of 20um are combined in the TeraSpike TD-800-X-HRS. The enhanced sensitivity around 1 THz makes this microprobe the perfect choice for most applications.
Protemics microprobe series TeraSpike is the new generation of high-performance microprobes for the photo-conductive detection of electric fields in the THz frequency range. Surface-near electric THz fields can now be measured with unprecedented resolution, signal quality and low invasiveness. The microprobes seamlessly fit into systems with optical excitation wavelengths below 860 nm and are the most cost-efficient solution to turn an existing time-domain pump/probe-system into a powerful THz near-field system for high-resolution imaging.
Breaking the resolution limits of standard THz imaging systems:
|The capability of an existing THz setup can be vastly enhanced with the implementation of a TeraSpike near-field detector with micron resolution. This covers applications ranging from contactless sheet resistance measurement, time-domain reflecto-metry for fault isolation in chip-packages to THz near-field imaging of THz devices like meta-materials or waveguides. Thanks to the low optical power requirements of the TeraSpike microprobes (typ. < 4 mW average power at 700-860nm) they are compatible to most pulsed laser sources (pulse durations < 150 fs recommended). *The T-Era-100A-800-air and T-Era-400A-800-air Sensors can be used as the THz emitter.|
|Max. Spatial Resolution:||20 um|
|PC Gap Size:||2 um|
|Dark Current @ 1 V Bias:||< 0.5 nA|
|Photocurrent (4mW, 1 V bias, 20um focus):||> 0.6 uA|
|Detected Z-Field Component:||x|
|Excitation Wavelength:||700 .. 860nm|
|Avg. Excitation Power:||0.1 .. 4 mW|
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